N-channel Power MOSFET featuring 250V drain-source voltage and 25A continuous drain current. This single-element enhancement mode MOSFET utilizes OptiMOS process technology and offers a low 60mΩ drain-source resistance at 10V. Housed in a 3-pin TO-220 package with a tab, it supports through-hole mounting and operates within a -55°C to 175°C temperature range. Key specifications include a typical gate charge of 22nC and input capacitance of 1770pF.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP600N25N3 G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 25A |
| Maximum Drain Source Resistance | 60@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 1770@100VpF |
| Maximum Power Dissipation | 136000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPP600N25N3 G Datasheet
Download the complete datasheet for Infineon IPP600N25N3 G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.