N-channel silicon power MOSFET featuring 600V drain-source voltage and 50A continuous drain current. This single-element, 3-terminal device offers a low on-resistance of 0.04 ohms. Designed with a TO-220AB package, it is a metal-oxide semiconductor field-effect transistor suitable for power switching applications.
Quick Jump:
Technical Specifications
Infineon IPP60R040C7XKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPP60R040C7XKSA1 Datasheet
Download the complete datasheet for Infineon IPP60R040C7XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.