N-channel silicon power MOSFET featuring 600V drain-source voltage and 31A continuous drain current. This metal-oxide semiconductor FET offers a low 99mΩ on-state resistance and 255W maximum power dissipation. Packaged in a TO-220AB case, it operates from -55°C to 150°C and is RoHS compliant and halogen-free.
PackageTO-220-3
Power255W
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Technical Specifications
Infineon IPP60R099CPXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 255W |
| On-State Resistance | 99mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 255W |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP60R099CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPP60R099CPXKSA1 to view detailed technical specifications.
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