N-Channel Power MOSFET featuring 600V drain-source voltage and 25A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 125mΩ on-state resistance and a maximum power dissipation of 208W. Designed with a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and is Halogen Free, Lead Free, and RoHS Compliant. Key electrical characteristics include 2.5nF input capacitance and fast switching times with 15ns turn-on and 50ns turn-off delays.
PackageTO-220-3
Current Rating25A
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Technical Specifications
Infineon IPP60R125CPXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| On-State Resistance | 125mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP60R125CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPP60R125CPXKSA1 to view detailed technical specifications.
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