N-channel Power MOSFET featuring 650V drain-source voltage and 3.2A continuous drain current. This single-element transistor utilizes CoolMOS process technology and is housed in a 3-pin TO-220 package with a tab for through-hole mounting. Key specifications include a maximum drain-source resistance of 1400 mOhm at 10V and a typical gate charge of 9.4 nC at 10V. Maximum power dissipation is 28.4W, with an operating temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP60R1K4C6 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.36(Max)
Package Width (mm)
4.57(Max)
Package Height (mm)
9.45(Max)
Seated Plane Height (mm)
20.75(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
CoolMOS
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
3.2A
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Resistance
1400@10VmOhm
Typical Gate Charge @ Vgs
9.4@10VnC
Typical Gate Charge @ 10V
9.4nC
Typical Input Capacitance @ Vds
200@100VpF
Maximum Power Dissipation
28400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPP60R1K4C6 Datasheet
Download the complete datasheet for Infineon IPP60R1K4C6 to view detailed technical specifications.
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