N-channel power MOSFET featuring 600V drain-source breakdown voltage and 380mΩ on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 10.6A and a maximum power dissipation of 83W. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C and is RoHS compliant and halogen-free. Key switching characteristics include an 8ns fall time, 11ns turn-on delay, and 56ns turn-off delay.
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Infineon IPP60R380E6XKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 340mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 380mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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