N-channel power MOSFET featuring 600V drain-source breakdown voltage and 9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 385mΩ drain-source resistance (Rds On Max) and 83W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key electrical characteristics include a 3V threshold voltage and a 790pF input capacitance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power83W
Quick Jump:
Technical Specifications
Infineon IPP60R385CP technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 385mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 385mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP60R385CP Datasheet
Download the complete datasheet for Infineon IPP60R385CP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
