N-channel power MOSFET featuring 600V drain-source voltage and 8.1A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 520mΩ Rds On and 650V breakdown voltage. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a maximum power dissipation of 66W. Key switching characteristics include a 9ns fall time and 12ns turn-on delay time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power66W
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Technical Specifications
Infineon IPP60R520E6 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 470mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 512pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 12ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP60R520E6 Datasheet
Download the complete datasheet for Infineon IPP60R520E6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.