N-channel Power MOSFET with 600V drain-source voltage and 4.4A continuous drain current. Features CoolMOS C6 process technology and a TO-220 package for through-hole mounting. Offers a low drain-source on-resistance of 950mΩ at 10V and a typical gate charge of 13nC at 10V. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IPP60R950C6 technical specifications.
General
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 9.25 |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS C6 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 4.4A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 950@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 280@100VpF |
| Maximum Power Dissipation | 37000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPP60R950C6 Datasheet
Download the complete datasheet for Infineon IPP60R950C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.