N-channel Power MOSFET featuring 650V drain-source voltage and 46A continuous drain current. Offers low on-state resistance of 45mΩ (45 milliohms) and a maximum power dissipation of 227W. Designed for through-hole mounting in a TO-220 package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with a 7ns fall time and 20ns turn-on delay. It operates within a temperature range of -55°C to 150°C and is RoHS compliant and halogen-free.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP65R045C7XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.34nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Mount | Through Hole |
| On-State Resistance | 45mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP65R045C7XKSA1 Datasheet
Download the complete datasheet for Infineon IPP65R045C7XKSA1 to view detailed technical specifications.
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