Infineon
IPP65R190CFDAAKSA1
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP65R190CFDAAKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.85nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 151W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP65R190CFDAAKSA1 Datasheet
Download the complete datasheet for Infineon IPP65R190CFDAAKSA1 to view detailed technical specifications.
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