Infineon
IPP65R225C7
Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
Power63W
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Technical Specifications
Infineon IPP65R225C7 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 225mR |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 63W |
| Rds On Max | 225mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.079014oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP65R225C7 Datasheet
Download the complete datasheet for Infineon IPP65R225C7 to view detailed technical specifications.
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