N-channel Power MOSFET with 650V drain-source voltage and 6A continuous drain current. Features CoolMOS process technology, 660mΩ drain-source resistance at 10V, and 20nC typical gate charge. Packaged in a 3-pin TO-220 through-hole plastic package with a tab, suitable for automotive applications. Operating temperature range from -40°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP65R660CFDA technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 6A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 660@10VmOhm |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 543@100VpF |
| Maximum Power Dissipation | 62500mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPP65R660CFDA Datasheet
Download the complete datasheet for Infineon IPP65R660CFDA to view detailed technical specifications.
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