N-channel silicon power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. This device offers a low 11.6mΩ maximum drain-source on-resistance and 125W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it includes fast switching characteristics with turn-on and turn-off delay times of 17ns and 25ns respectively. Packaged in a TO-220-3 configuration, this RoHS and Halogen Free component is supplied in rail/tube packaging.
PackageTO-220-3
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Infineon IPP70N10S312AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 11.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 4.355nF |
| Length | 10mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 11.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 17ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP70N10S312AKSA1 Datasheet
Download the complete datasheet for Infineon IPP70N10S312AKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
