N-channel MOSFET with 100V drain-source breakdown voltage and 13A continuous drain current. Features 80mΩ drain-source resistance (Rds On Max) and 31W maximum power dissipation. Operates within a temperature range of -55°C to 175°C and is packaged in a TO-220 through-hole mount. Includes fast switching characteristics with a 9ns turn-on delay and 3ns fall time. This component is RoHS and REACH SVHC compliant.
PackageTO-220
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP80CN10NG technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 716pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 80mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP80CN10NG Datasheet
Download the complete datasheet for Infineon IPP80CN10NG to view detailed technical specifications.
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