N-channel silicon power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. This device offers a low 4mΩ Rds On resistance and 300W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C. The TO-220-3 package facilitates efficient thermal management.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP80N04S2-H4 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 4.4nF |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 23ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP80N04S2-H4 Datasheet
Download the complete datasheet for Infineon IPP80N04S2-H4 to view detailed technical specifications.
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