N-channel silicon power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. This device offers a low 4mΩ Rds On resistance and 300W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C. The TO-220-3 package facilitates efficient thermal management.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP80N04S2-H4 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.65mm
Input Capacitance
4.4nF
Length
10mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
4mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
46ns
Turn-On Delay Time
23ns
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N04S2-H4 Datasheet
Download the complete datasheet for Infineon IPP80N04S2-H4 to view detailed technical specifications.
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