N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.7mΩ Rds On resistance. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The TO-220-3 package facilitates efficient heat management, with typical switching times including a 26ns turn-on delay and 56ns turn-off delay.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP80N04S204AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 5.3nF |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 26ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP80N04S204AKSA1 Datasheet
Download the complete datasheet for Infineon IPP80N04S204AKSA1 to view detailed technical specifications.
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