Infineon
IPP80N04S3-03
Power Field-Effect Transistor, 80A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
PolarityN-CHANNEL
Power188W
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Technical Specifications
Infineon IPP80N04S3-03 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
7.3nF
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
188W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
188W
Rds On Max
3.5mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
39ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N04S3-03 Datasheet
Download the complete datasheet for Infineon IPP80N04S3-03 to view detailed technical specifications.
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