Infineon
IPP80N04S3-H4
Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Infineon IPP80N04S3-H4 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.9nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Rds On Max
4.8mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N04S3-H4 Datasheet
Download the complete datasheet for Infineon IPP80N04S3-H4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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