Infineon
IPP80N04S4-04
Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
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Technical Specifications
Infineon IPP80N04S4-04 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.65mm
Input Capacitance
3.44nF
Length
10mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
71W
Package Quantity
500
Packaging
Rail/Tube
Rds On Max
4.6mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
9ns
Turn-On Delay Time
10ns
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N04S4-04 Datasheet
Download the complete datasheet for Infineon IPP80N04S4-04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.