N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.1mΩ Rds On resistance. Operating across a wide temperature range of -55°C to 175°C, it boasts a maximum power dissipation of 300W. The TO-220-3 package is halogen-free and RoHS compliant, with typical turn-on delay of 18ns and fall time of 20ns.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP80N06S2-05 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.65mm
Input Capacitance
5.11nF
Length
10mm
Max Dual Supply Voltage
55V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
5.1mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
54ns
Turn-On Delay Time
18ns
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N06S2-05 Datasheet
Download the complete datasheet for Infineon IPP80N06S2-05 to view detailed technical specifications.
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