N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.1mΩ Rds On resistance. Operating across a wide temperature range of -55°C to 175°C, it boasts a maximum power dissipation of 300W. The TO-220-3 package is halogen-free and RoHS compliant, with typical turn-on delay of 18ns and fall time of 20ns.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Infineon IPP80N06S2-05 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 5.11nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 5.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 18ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP80N06S2-05 Datasheet
Download the complete datasheet for Infineon IPP80N06S2-05 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.