N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 215W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 175°C temperature range and is packaged in a TO-220-3 configuration. Key switching parameters include 14ns turn-on delay and 14ns fall time.
PackageTO-220-3
Voltage55V
Current80A
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP80N06S2-08 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Current | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.86nF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 215W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 14ns |
| Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP80N06S2-08 Datasheet
Download the complete datasheet for Infineon IPP80N06S2-08 to view detailed technical specifications.
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