N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 215W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 175°C temperature range and is packaged in a TO-220-3 configuration. Key switching parameters include 14ns turn-on delay and 14ns fall time.
PackageTO-220-3
Voltage55V
Current80A
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP80N06S2-08 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
2.86nF
Max Dual Supply Voltage
55V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
215W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
215W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
32ns
Turn-On Delay Time
14ns
Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N06S2-08 Datasheet
Download the complete datasheet for Infineon IPP80N06S2-08 to view detailed technical specifications.
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