Infineon
IPP80N06S3-05
Power Field-Effect Transistor, 80A I(D), 55V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP80N06S3-05 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
5.4mR
Drain to Source Voltage (Vdss)
55V
Fall Time
47ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
10.76nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
165W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
165W
Rds On Max
5.4mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
46ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N06S3-05 Datasheet
Download the complete datasheet for Infineon IPP80N06S3-05 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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