Infineon
IPP80N06S3-07
Small Signal Field-Effect Transistor, 80A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP80N06S3-07 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.768nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
135W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
135W
Rds On Max
6.8mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
34ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon IPP80N06S3-07 Datasheet
Download the complete datasheet for Infineon IPP80N06S3-07 to view detailed technical specifications.
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