IPP80N06S3L-08

Power Field-Effect Transistor, 80A I(D), 55V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power105W

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Infineon IPP80N06S3L-08 technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	80A
Drain to Source Breakdown Voltage	55V
Drain to Source Voltage (Vdss)	55V
Fall Time	25ns
Gate to Source Voltage (Vgs)	16V
Input Capacitance	6.475nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	105W
Mount	Through Hole
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	105W
Rds On Max	7.9mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	39ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.