Infineon
IPP90R1K2C3
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, TO-220, 3 PIN
PackageTO-220-3
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Technical Specifications
Infineon IPP90R1K2C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.1A
Drain to Source Voltage (Vdss)
900V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.95mm
Input Capacitance
710pF
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Package Quantity
500
Packaging
Rail/Tube
Rds On Max
1.2R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
400ns
Turn-On Delay Time
70ns
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPP90R1K2C3 Datasheet
Download the complete datasheet for Infineon IPP90R1K2C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.