N-channel power MOSFET featuring 900V drain-to-source breakdown voltage and 11A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 500mΩ drain-to-source resistance (Rds On Max) and 156W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C and boasts fast switching characteristics with a 70ns turn-on delay and 25ns fall time. The component is RoHS and Halogen Free compliant.
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Infineon IPP90R500C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Nominal Vgs | 3V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Rds On Max | 500mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| RoHS | Compliant |
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