Infineon
IPS050N03LG
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN
Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN
PackageTO-251-3
PolarityN-CHANNEL
Power68W
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Technical Specifications
Infineon IPS050N03LG technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS050N03LG Datasheet
Download the complete datasheet for Infineon IPS050N03LG to view detailed technical specifications.
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