N-Channel Power MOSFET, TO-251 package, featuring 30V Drain-Source Breakdown Voltage and 50A Continuous Drain Current. Offers a low 7.5mΩ Rds On (Max) and 1.9nF Input Capacitance. Operates across a wide temperature range from -55°C to 175°C with 47W Power Dissipation. Includes fast switching characteristics with a 2.8ns Fall Time.
PackageTO-251-3
PolarityN-CHANNEL
Power47W
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Technical Specifications
Infineon IPS075N03LGAKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 4.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS075N03LGAKMA1 Datasheet
Download the complete datasheet for Infineon IPS075N03LGAKMA1 to view detailed technical specifications.
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