N-channel MOSFET with 30V drain-source breakdown voltage and 35A continuous drain current. Features low 10.5mΩ Rds On, enabling efficient power switching. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 38W. Packaged in a TO-251 case for through-hole mounting, this RoHS compliant component offers fast switching speeds with turn-on delay of 3.7ns and fall time of 2.4ns.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon IPS105N03LG technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.5nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 10.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 3.7ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS105N03LG Datasheet
Download the complete datasheet for Infineon IPS105N03LG to view detailed technical specifications.
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