N-channel Power MOSFET featuring 100V drain-source voltage and 75A continuous drain current. This single-element transistor utilizes OptiMOS process technology and offers a low 11.8 mOhm drain-source resistance at 10V. Packaged in a TO-251 through-hole configuration with 3 pins and a tab, it operates from -55°C to 175°C and supports a maximum power dissipation of 125W.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Infineon IPS118N10N G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | TO-251 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 6.22 |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 11.8@10VmOhm |
| Typical Gate Charge @ Vgs | 49@10VnC |
| Typical Gate Charge @ 10V | 49nC |
| Typical Input Capacitance @ Vds | 3250@50VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon IPS118N10N G Datasheet
Download the complete datasheet for Infineon IPS118N10N G to view detailed technical specifications.
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