N-channel MOSFET, 30V drain-source breakdown voltage, 30A continuous drain current, and 13.5mΩ Rds On max. Features a TO-251-3 package, 31W power dissipation, and operates from -55°C to 175°C. Includes fast switching times with 3ns turn-on delay and 2ns fall time. RoHS compliant and halogen-free.
PackageTO-251-3
PolarityN-CHANNEL
Power31W
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Technical Specifications
Infineon IPS135N03LG technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 13.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS135N03LG Datasheet
Download the complete datasheet for Infineon IPS135N03LG to view detailed technical specifications.
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