IPS50R520CP

Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC, TO-251, 3 PIN

PackageTO-251-3

PolarityN-CHANNEL

Power66W

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Infineon IPS50R520CP technical specifications.

Package/Case	TO-251-3
Continuous Drain Current (ID)	7.1A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	520mR
Drain to Source Voltage (Vdss)	550V
Fall Time	17ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	680pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	66W
Nominal Vgs	3V
Package Quantity	1500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	66W
Rds On Max	520mR
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	80ns
Turn-On Delay Time	35ns