N-channel power bipolar transistor in a TO-251-3 package. Features 650V drain-to-source voltage and 3.2A continuous drain current. Offers 1.4 Ohm on-state resistance and 28W maximum power dissipation. Operates from -55°C to 150°C with a gate-to-source voltage of 20V. Includes 7.7ns turn-on and 33ns turn-off delay times. RoHS compliant and halogen-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Infineon IPS65R1K4C6AKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 6.22mm |
| Input Capacitance | 225pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 1.4R |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 7.7ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS65R1K4C6AKMA1 Datasheet
Download the complete datasheet for Infineon IPS65R1K4C6AKMA1 to view detailed technical specifications.
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