N-Channel Power Bipolar Transistor in TO-251 package, featuring 650V drain-to-source voltage and 4.5A continuous drain current. Offers 950mΩ drain-to-source resistance, 20V gate-to-source voltage, and 37W maximum power dissipation. Operates from -55°C to 150°C with 6.6ns turn-on and 41ns turn-off delay times. This RoHS compliant component is halogen-free and mounts via through-hole.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power37W
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Technical Specifications
Infineon IPS65R950C6AKMA1 technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 6.22mm |
| Input Capacitance | 328pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| RoHS Compliant | Yes |
| Series | IPS65R950 |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 6.6ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS65R950C6AKMA1 Datasheet
Download the complete datasheet for Infineon IPS65R950C6AKMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.