N-Channel Power MOSFET featuring 600V drain-source voltage and 44A continuous drain current. Boasts a low on-resistance of 0.05 ohms for efficient power switching. This single-element, 3-terminal silicon device utilizes Metal-Oxide-Semiconductor Field-Effect Transistor technology. Operates across a wide temperature range from -55°C to 150°C.
Quick Jump:
Technical Specifications
Infineon IPT60R050G7XTMA1 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPT60R050G7XTMA1 Datasheet
Download the complete datasheet for Infineon IPT60R050G7XTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.