The IPU04N03LBG is a 30V N-CHANNEL MOSFET with a maximum continuous drain current of 50A and a maximum power dissipation of 115W. It is packaged in a TO-251-3 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The IPU04N03LBG features a maximum Rds on resistance of 4.3mR and a turn-off delay time of 43ns.
Infineon IPU04N03LBG technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 43ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPU04N03LBG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.