The IPU135N08N3GBKMA1 is a TO-251 packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a gate to source voltage of 20V. The device is capable of a power dissipation of 79W and features a fall time of 5ns. It is available in rail/Tube packaging and is RoHS compliant.
PackageTO-251
MountingThrough Hole
Power79W
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Technical Specifications
Infineon IPU135N08N3GBKMA1 technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 50A |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU135N08N3GBKMA1 Datasheet
Download the complete datasheet for Infineon IPU135N08N3GBKMA1 to view detailed technical specifications.
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