N-channel Power MOSFET, 500V Drain-to-Source Voltage (Vdss), 3.1A Continuous Drain Current (ID), and 1.4 Ohm Drain-to-Source Resistance (Rds On Max). Features include a 6.5ns turn-on delay, 23ns turn-off delay, and 30ns fall time. This through-hole mounted component is housed in a TO-251-3 package with a maximum power dissipation of 25W and operates between -55°C and 150°C. RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Infineon IPU50R1K4CEBKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.22mm |
| Input Capacitance | 178pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 6.5ns |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU50R1K4CEBKMA1 Datasheet
Download the complete datasheet for Infineon IPU50R1K4CEBKMA1 to view detailed technical specifications.
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