N-channel Power MOSFET featuring 500V Drain-to-Source Voltage (Vdss) and 2.4A Continuous Drain Current (ID). This Metal-Oxide-Semiconductor FET offers a low 2 Ohm Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 22W. Designed for through-hole and surface mount applications, it operates within a temperature range of -55°C to 150°C. The component exhibits fast switching characteristics with a turn-on delay time of 6ns and a fall time of 38ns. Packaged in TO-251-3, this RoHS compliant device is supplied in rail/tube packaging.
PackageTO-251-3
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
Power22W
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Technical Specifications
Infineon IPU50R2K0CEBKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 124pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22W |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 22W |
| Rds On Max | 2R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 6ns |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU50R2K0CEBKMA1 Datasheet
Download the complete datasheet for Infineon IPU50R2K0CEBKMA1 to view detailed technical specifications.
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