Infineon
IPU60R1K4C6
Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
PackageTO-251-3
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Technical Specifications
Infineon IPU60R1K4C6 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
3.2A
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPU60R1K4C6 Datasheet
Download the complete datasheet for Infineon IPU60R1K4C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.