N-channel power MOSFET featuring 600V drain-source voltage and 2 Ohm drain-source resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 2.4A and a maximum power dissipation of 22.3W. Designed for through-hole mounting in a TO-251AA package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns turn-on delay and a 50ns fall time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPU60R2K0C6 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.4A
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
6.22mm
Input Capacitance
140pF
Lead Free
Contains Lead
Length
6.73mm
Max Dual Supply Voltage
600V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
22.3W
Mount
Through Hole
Package Quantity
1500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
2R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
30ns
Turn-On Delay Time
7ns
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPU60R2K0C6 Datasheet
Download the complete datasheet for Infineon IPU60R2K0C6 to view detailed technical specifications.
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