N-channel MOSFET featuring 800V drain-source voltage and 5.7A continuous drain current. This through-hole component in a TO-251-3 package offers a maximum power dissipation of 83W and a low on-resistance of 950mR. Key switching characteristics include a 25ns turn-on delay and an 8ns fall time. Operating temperature range spans from -55°C to 150°C.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPU80R1K0CEBKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 785pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.012102oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU80R1K0CEBKMA1 Datasheet
Download the complete datasheet for Infineon IPU80R1K0CEBKMA1 to view detailed technical specifications.
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