N-channel MOSFET for through-hole mounting, featuring 800V drain-source voltage and 3.9A continuous drain current. This component offers a low 1.4 Ohm drain-source resistance, with fast switching characteristics including a 25ns turn-on delay and 12ns fall time. Operating across a wide temperature range from -55°C to 150°C, it supports up to 63W power dissipation. The TO-251-3 package houses a single channel with a 570pF input capacitance.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPU80R1K4CEBKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.012102oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU80R1K4CEBKMA1 Datasheet
Download the complete datasheet for Infineon IPU80R1K4CEBKMA1 to view detailed technical specifications.
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