N-channel MOSFET featuring 800V drain-source voltage and 1.9A continuous drain current. This through-hole component offers 2.8 Ohm drain-source resistance and a maximum power dissipation of 42W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-251-3 package. Key switching characteristics include a 25ns turn-on delay and an 18ns fall time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPU80R2K8CEBKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Not Halogen Free |
| Height | 6.22mm |
| Input Capacitance | 290pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2.8R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.012102oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPU80R2K8CEBKMA1 Datasheet
Download the complete datasheet for Infineon IPU80R2K8CEBKMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.