This 800 V N-channel superjunction MOSFET is supplied in a PG-TO251-3 (IPAK) package and belongs to the CoolMOS P7 family. It is rated for 1.5 A continuous drain current at 25 °C case temperature and specifies a maximum drain-source on-state resistance of 4.5 Ω at 25 °C. The device integrates Zener diode ESD protection and is characterized by a typical total gate charge of 4.0 nC, 80 pF input capacitance, and 0.4 µJ output energy at 500 V. Operating junction temperature ranges from -55 °C to 150 °C.
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| Transistor Type | N-channel superjunction MOSFET |
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 1.5A |
| Continuous Drain Current at 100C | 1.0A |
| Pulsed Drain Current | 2.6A |
| Drain-Source On-Resistance Max | 4.5Ω |
| Gate Threshold Voltage Typ | 3V |
| Gate Threshold Voltage Range | 2.5 to 3.5V |
| Total Gate Charge Typ | 4.0nC |
| Gate-Drain Charge Typ | 1.8nC |
| Gate-Source Charge Typ | 0.6nC |
| Input Capacitance Typ | 80pF |
| Output Capacitance Typ | 3pF |
| Power Dissipation | 13W |
| Operating Junction Temperature Min | -55°C |
| Operating Junction Temperature Max | 150°C |
| Thermal Resistance Junction-Case Max | 9.4°C/W |
| Package | PG-TO251-3 |
| Reverse Recovery Time Typ | 600ns |
| Reverse Recovery Charge Typ | 1.6µC |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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