Infineon
IPW50R280CEFKSA1
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
PolarityN-CHANNEL
Power92W
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Technical Specifications
Infineon IPW50R280CEFKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 773pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 92W |
| On-State Resistance | 280mR |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 92W |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW50R280CEFKSA1 Datasheet
Download the complete datasheet for Infineon IPW50R280CEFKSA1 to view detailed technical specifications.
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