N-channel power MOSFET with 500V drain-source breakdown voltage and 12A continuous drain current. Features 299mΩ drain-to-source resistance at nominal Vgs of 3V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 104W. Packaged in a TO-247-3 through-hole configuration. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 12ns.
PackageTO-247-3
PolarityN-CHANNEL
Power104W
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Technical Specifications
Infineon IPW50R299CP technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 1.19nF |
| Length | 16.03mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Nominal Vgs | 3V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW50R299CP Datasheet
Download the complete datasheet for Infineon IPW50R299CP to view detailed technical specifications.
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