N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 10A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 350mΩ drain-to-source resistance (Rds On Max). Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 89W. Key switching characteristics include a 35ns turn-on delay and 12ns fall time.
PackageTO-247-3
PolarityN-CHANNEL
Power89W
Quick Jump:
Technical Specifications
Infineon IPW50R350CP technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.02nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Nominal Vgs | 3V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW50R350CP Datasheet
Download the complete datasheet for Infineon IPW50R350CP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
