N-Channel Power MOSFET, 600V drain-source voltage, 50A continuous drain current, and 0.04 ohm drain-source on-resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features three terminals and is housed in a TO-247 package.
Quick Jump:
Technical Specifications
Infineon IPW60R040C7XKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPW60R040C7XKSA1 Datasheet
Download the complete datasheet for Infineon IPW60R040C7XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.